The ITO films are highly transparent (90.2%) and conductive (ρ = 7.2 × 10 –4 Ω·cm) with the highest figure of merit (1.19 × 10 –2 Ω –1) among all the solution-processed ITO films reported to date. The high transparency and figure of merit, low sheet resistance (30 Ω/sq), and roughness (1.14 nm) are comparable with the benchmark
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The optimized ITO:Ti thin film shows a carrier concentration of 6.24 × 10 20 cm −3, a mobility of 34 cm 2 /V s, and a resistivity of 2.3 × 10 −4 Ω cm at the Ti atomic ratio of 2.5%. The ITO:Ti film also shows a better thermal stability, which is thought to be due to the polycrystalline structure.
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